531X303MCPARG1 F31X303MCPAPG100600 | GE | Lock information with a latch

Description

531X303MCPARG1 F31X303MCPAPG100600 | GE | Lock information with a latch

1. .Many products are not yet on the shelves please contact us for more products
2. .If there is any inconsistency between the product model and the picture on display, the model shall prevail. Contact us for the specific product picture, and we will arrange to take photos in the warehouse for confirmation
3. .We have 16 shared warehouses around the world, so please understand that it can sometimes take several hours to accurately return to you. Of course, we will respond to your concerns as soon as possible

531X303MCPARG1, Random Access Memory, refers to random access memory, which is actually memory. Power failure can result in data loss. It is mainly divided into SRAM (static) and DRAM (dynamic). The main difference lies in the storage unit, where DRAM uses capacitive charges for storage. Need to constantly refresh and charge. SRAM locks information with a latch and does not require a refresh. But it also needs to be charged and maintained. Regarding DRAM, its basic storage unit is as follows, using a transistor to control the charging and discharging of the capacitor.

531X303MCPARG1, Random Access Memory, refers to random access memory, which is actually memory. Power failure can result in data loss.
It is mainly divided into SRAM (static) and DRAM (dynamic). The main difference lies in the storage unit, where DRAM uses capacitive charges for storage. Need to constantly refresh and charge. SRAM locks information with a latch and does not require a refresh. But it also needs to be charged and maintained.
The basic storage unit of F31X303MCPAPG100600 is as follows, which uses a transistor to control the charging and discharging of the capacitor

Mailbox：sauldcsplc@gmail.com |531X303MCPARG1 F31X303MCPAPG100600
www.abbgedcs.com | Qiming Industrial Control | Simon +86 13822101417