A4H124-24FX P0973JN| FOXBORO | gate resistance module

Description

A4H124-24FX P0973JN| FOXBORO | gate resistance module

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In practical circuits, the selection of gate A4H124-24FX should consider the requirements of switching speed and the magnitude of losses. The smaller the gate resistance, the better. When the gate resistance is very small, the voltage spike between IGBT CE is too large. When the gate resistance is large, it will increase the switching loss. So, when choosing an IGBT driver, it is necessary to appropriately reduce the gate P0973JN within the range that the peak voltage can withstand. Due to the stray inductance in the circuit, it can cause voltage and current spikes and ringing in the switching state. In actual driving circuits, the wiring should be as short as possible, and the driving circuit and absorption circuit should be arranged on the same PCB board. At the same time, a bidirectional voltage regulator should be added between the GE near the IGBT to clamp the voltage spikes coupled to the gate caused by clamping.

For high-power A4H124-24FX , the design and selection of drivers are based on the following parameter requirements: device turn off bias, gate charge, stability, and power supply conditions. The positive bias voltage VGE, negative bias voltage VGE, and gate resistance RG of the gate circuit have varying degrees of influence on the on state voltage drop, switching time, switching loss, short-circuit resistance, and dv/dt current parameters of the IGBT. The relationship between gate driving conditions and device characteristics is shown in Table 1. The variation of gate positive A4H124-24FX has a significant impact on the turn-on characteristics, load short-circuit capacity, and dVcE/dt current of IGBTs, while gate negative bias has a greater impact on the turn-off characteristics. In the design of gate circuits, attention should also be paid to issues such as turn-on characteristics, load short-circuit capacity, and false triggering caused by dVcE/dt current (P0973JN).

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