BRAKE BCC-1

Description

BRAKE BCC-1

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To improve power density, the typical on resistance of the BRAKE BCC-1 is reduced to 18.5 mW under 4.5 V conditions, reaching an advanced level in the industry. 16% lower than the closest competitor devices of the same package size. The SiZF4800LDT has a low on resistance multiplied by gate charge, with an important figure of merit (FOM) of 131mW * nC for MOSFET power conversion applications. The product of on resistance and gate charge improves the efficiency of high-frequency switching applications.

The BRAKE BCC-1 device adopts flip chip technology to enhance heat dissipation capability, with a thermal resistance 54% lower than competing MOSFETs. SiZF4800LDT has low on resistance and thermal resistance, with a continuous leakage current of 36 A, which is 38% higher than similar competing devices. The unique pin configuration of MOSFETs helps simplify PCB layout and supports shortening switch circuits, thereby reducing parasitic inductance. SiZF4800LDT has undergone 100% Rg and UIS testing, complies with RoHS standards, and is halogen-free.

Please contact us for the best price. Email: 【sauldcsplc@gmail.com】

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Mailbox：sauldcsplc@gmail.com |BRAKE BCC-1
www.abbgedcs.com | Qiming Industrial Control | Simon +86 13822101417