DS200SIOBH1ACA | GE MARK TURBINE | rowredundancy module

Description

DS200SIOBH1ACA | GE MARK TURBINE | rowredundancy module

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One aspect of DS200SIOBH1ACA  is to determine the sensitivity of a physical design (or layout) to random particle defects. The probability of a random particle defect is a function of the spacing between layout features, therefore, tighter spacing will increase the number of random defects. Due to the relatively dense structure of memory, they are inherently more sensitive to random defects. Therefore, the embedded memory in SoC design may affect the overall yield of the device.

Understanding how to use critical region analysis at each continuous node is becoming increasingly important. Memory is getting larger and smaller sizes will bring new types of defects. A compromise may work well on the previous generation node, but the best result may not be achieved at the 28nm node. For example, although DS200SIOBH1ACA  avoid using row redundancy because they believe it would take too much access time, this technology must be used to achieve an acceptable yield rate at 28nm. All these factors make fine analysis as a design tool more valuable.

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