DS200TCEAG1BNE DS215TCEAG1BZZ01A | GE | measurement circuit module

Description

DS200TCEAG1BNE DS215TCEAG1BZZ01A | GE | measurement circuit module

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DS200TCEAG1BNE DS215TCEAG1BZZ01A series chip power supply pin only need to be configured with 100 nF+10uF decoupling capacitor. However, the SDADC module has separate power and reference source pins. In order to have high precision, it is necessary to use a high-precision reference source as a reference. Here, REF3025, a 2.5V voltage reference source chip with temperature drift of 50ppm produced by TI, is used. Analog and digital isolation design of circuits. See Figure 2 for the schematic design.

The analog front end of the DS200TCEAG1BNE DS215TCEAG1BZZ01A design is the PT100 measurement circuit of Wheatstone bridge, of course, the analog front end can also be designed to measure 0mA~20 mA signals. The acquisition system can measure the voltage and current signal, and the front-end circuit of the collector needs to be designed according to the actual application. A three-wire PT100 measuring front end with bridge type and isolation between channels is described here. The schematic diagram is shown in Figure 3.

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