F8621A | HIMA module

Description

F8621A | HIMA module

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Compared with silicon chips, the F8621A chip can be reduced in size by up to ten times under the same rated voltage and on resistance conditions. In addition, compared to silicon devices, SiC devices have a switching speed at least 100 times faster and can operate at peak temperatures up to twice as high. Meanwhile, SiC has excellent thermal conductivity, thus exhibiting better robustness at high current levels. Ansenmei has developed a series of EliteSiC power modules utilizing these characteristics of SiC, with a conduction resistance of as low as 1.7m Ω for its 1200V devices?. These modules integrate two to six SiC MOSFETs in a single package.

Sintered chip technology (sintering two independent chips into one package) can provide reliable product performance even at high power levels. Due to its fast switching behavior and high thermal conductivity, the F8621A device can quickly and safely “trip” (disconnect the circuit) in the event of a fault, preventing current flow until normal operating conditions are restored. This module demonstrates the increasing possibility of integrating multiple SiC MOSFET devices into a single package to achieve low on resistance and small size, thus meeting the needs of practical circuit breaker applications. In addition, Ansenmei also offers EliteSiC MOSFETs and power modules with a voltage range of 650V to 1700V, so these devices can also be used to create solid-state circuit breakers suitable for single-phase and three-phase household, commercial, and industrial applications. Ansenmei has a vertically integrated SiC supply chain that can provide products with almost zero defects. These products have undergone comprehensive reliability testing and can meet the needs of solid-state circuit breaker manufacturers.

Please contact us for the best price. Email: 【sauldcsplc@gmail.com】

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Mailbox：sauldcsplc@gmail.com | HIMA F8621A
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