FBM240 P0917GZ | FOXBORO | Defect Density module

Description

FBM240 P0917GZ | FOXBORO | Defect Density module

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FBM240 P0917GZ wafer factories have multiple methods to collect defect density data. For the use of critical area analysis, wafer fabs must convert defect density data into a format compatible with analysis tools. The most common format is the following simple power equation: D (X)=K/XQ, where K is a constant obtained from density data, X is the defect size, and Q is a decreasing power. The wafer factory will fit the open circuit and short circuit defect data of each layer with the equation format that supports critical area analysis. In principle, each layer must have a defect density and defect type, which will be used for critical area analysis. However, in reality, for each layer that adopts the same process steps, layer thickness, and design rules, the same defect density value is usually used.

FBM240 P0917GZ may also provide defect density data in the form of tables, which list the size and density values of each defect. A simplified assumption is that if the defect size exceeds the data range owned by the wafer factory, the defect density is zero.

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