GE IC660BBD101 Low Leakage Input/Output Block
¥6,788.00
🔔Module Number: IC660BBD101
⚠️Product status: Discontinued
🏚️Delivery time: In stock
🆕Product status: 100% new
🌍Sales country: All over the world
🥇Product situation: one year warranty
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Description
Due to the scarcity of frequency resources, as the TD-LTE industry chain gradually matures, the auction prices of the global TDD spectrum are also increasing. International operators also unanimously attach importance to the TDD spectrum, which was previously considered a “chicken rib”, as a strategic resource. From this perspective, a network that integrates FDD and TDD standards will become the mainstream for future international operators.
New technology is one of the important means to achieve capacity improvement. The development process of 2G/3G/4G fully reflects this law. Before the commercialization of 3G, the main research and industrialization direction of wireless communication technology, IC660BBD101, focused on how to improve the capacity of a single link, that is, how to achieve the capacity limit proposed by Shannon’s formula under given bandwidth conditions. And this task is announced to be completed with the commercialization of 3G. Afterwards, Ericsson began researching 4G (LTE-A) in 2002, with a focus on flexible and effective high bandwidth access technologies (such as OFDM/OFDMA). In 2007, it began substantive standardization work on 3GPP LTE and LTE-A. As of 2011, LTE-A was accepted as a 4G standard by the International Telecommunication Union and came to an end. At this point, wireless communication technology has achieved unprecedented flexible bandwidth access capabilities from 180KHz to 100MHz. This lays the technical foundation for significantly improving the capacity of future systems. Flexible bandwidth access technology also provides necessary technical support for future differentiated business needs.
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