GE MULTLIN F650-G-N-A-B-F-2-G-1-HI-C-E

Description

GE MULTLIN F650-G-N-A-B-F-2-G-1-HI-C-E

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F650-G-N-A-B-F-2-G-1-HI-C-E has recently released a new 1200 V SPM31 IPM series product, setting a new standard for three-phase frequency conversion applications. This breakthrough technology not only meets the growing demand for energy conservation, but also aims to reduce system costs and improve overall performance. It can be foreseen that the SPM31 IPM with new and improved features will have a profound impact on the heat pump market.

F650-G-N-A-B-F-2-G-1-HI-C-E adopts the latest 7th generation IGBT field cut off (FS7) technology, which has high efficiency and robustness. Optimized switch unit design and buffer configuration, as well as narrow electrical parameter distribution, can eliminate short-circuit oscillation phenomena in the operation of single and parallel devices. In addition, this technology also uses sub micron trench gate cell spacing to increase channel density and reduce conduction loss. Meanwhile, the optimized gate capacitance ensures smooth switching waveforms and lower switching losses. The use of multi-layer FS technology on the emitter side enhances the blocking ability and reduces the thickness of the drift layer, thereby reducing conduction and switching energy losses. The development of FS7 IGBT focuses on optimizing Vcesat and Eoff to achieve advanced device performance.

F650-G-N-A-B-F-2-G-1-HI-C-E Due to its significant reduction in electromagnetic interference (EMI), the SPM31 IPM has reduced power loss by up to 10%, increased power density by up to 9%, and reduced IGBT chip size by 20% compared to the previous generation product. The increase in power density helps designers simplify layouts, free up valuable space in heat pump systems, and improve efficiency. The SPM31 IPM offers multiple rated current options ranging from 15 to 35 amperes (A).

Please contact us for the best price. Email: 【sauldcsplc@gmail.com】

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