IC695CPE310-ACAT | GE | Using aluminum electrolytic capacitors

Description

IC695CPE310-ACAT | GE | Using aluminum electrolytic capacitors

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When using IC695CPE310-ACAT alone to drive IGBT. There are three points that should be considered. Firstly. The maximum current change rate of the driver should be set within the limit range of the minimum RG resistance, because for many IGBTs, using a larger RG will increase td (on) (conduction delay time), t d (off) (cutoff delay time), tr (rise time), and switch losses. In high-frequency applications (over 5 kHz), this loss should be avoided as much as possible. Additionally. The loss of the drive itself must also be considered.

If the loss of the drive itself is too large, it can cause the drive to overheat and cause damage. Finally, when M57962L is used to drive high-capacity IGBTs, its slow shutdown will increase losses. The reason for this phenomenon is that the current flowing through the Gres (reverse transfer capacitor) of the IGBT to the IC695CPE310-ACAT gate cannot be absorbed by the driver. Its impedance is not low enough, and this slow turn off time will become slower and require larger buffer capacitors. The driving circuit designed by M57962L is shown below.
Circuit Description: The decoupling capacitors C2 to C7 of the power supply are made of aluminum electrolytic capacitors with a capacity of 100 uF/50 V. The resistance value of R1 is 1 k Ω, the IC695CPE310-ACAT value of R2 is 1.5 k Ω, and the resistance value of R3 is 5.1 k Ω. The power supply uses a positive and negative 15 V power module, which is connected to pins 4 and 6 of M57962L, respectively. The logic control signal IN is input into the driver M57962L through pin l3. The selection of bidirectional voltage regulator Z1 is 9.1 V, Z2 is 18 V, and Z3 is 30 V to prevent the gate and emitter of IGBT from breakdown and damaging the driving circuit. The diode adopts a fast recovery FR107 transistor.

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