P0916VB | FOXBORO | Memory redundancy cable

Description

P0916VB | FOXBORO | Memory redundancy cable

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Due to the issue of random P0916VB , embedded memory in SoC may have a significant loss in yield. Of course, SoC can use other types of memory, but assuming the design uses embedded SRAM. Usually, SRAMIP (intellectual property) providers consider redundancy as an option for designers to choose from. The most common form of redundancy is the use of redundant rows and columns. The use of redundant columns is usually relatively simple, as they only need to solve the multiplexing problem of multiple bit lines and I/O ports, without involving address decoding.

When analyzing and studying fault situations in critical P0916VB  , it is important to define the layers and defect types related to memory failure modes. By examining the layout of a typical six transistor or eight transistor SRAM bit unit, some simple associations can be made. For example, by looking at the word lines and bit lines connected to the bit unit, one can find the relationship between the diffusion on the column line and the contact point with the column fault. Due to the fact that both the diffused contacts and the electrode contacts are connected to Metal 1, the row and column layers must share Metal 1 layers. Most layers in memory design are used in multiple locations, so not all defects on these layers will cause failures related to repair resources. There are also some irreparable or fatal defects, such as short circuits between power and ground.

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