PXI-7344 | NI | Voltage control device module

Description

PXI-7344 | NI | Voltage control device module

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It should be noted that the current flow direction of PXI-7344 is bidirectional, unlike the unidirectional conduction of transistors. For the conductive characteristics of MOSFETs, most materials, literature, and device data manuals only provide unidirectional conductive characteristic curves, and most applications only utilize their unidirectional conductive characteristics; However, there is little literature on its bidirectional conductivity characteristics. In fact, MOS-FET is a voltage control device that changes the thickness of the conductive channel generated by the induced electric field by the gate voltage, thereby controlling the magnitude of the drain current. Taking N-channel PXI-7344 as an example, when the gate voltage is less than the turn-on voltage, regardless of the polarity of the source and drain, there is always one of the two PN junctions back-to-back inside that is reverse biased, forming a depletion layer and the MOSFET is not conducting. When the gate voltage is greater than the turn-on voltage, an N-type channel is formed between the drain and source, and the N-type channel is only equivalent to a non-polar equivalent resistance, and its resistance is very small. At this time, if a forward voltage is applied between the drain and source, the current will flow from the drain to the source, which is a commonly used method; If a reverse voltage is applied between the drain and source, the current will flow from the source to the drain, which is rarely used.

In the PXI-7344 circuit of redundant power supply, the connection direction of MOSFET is different from conventional. Taking the N-channel pipe as an example, the connecting circuit should be as shown in Figure 3. If the input voltage of the power supply is higher than the load power supply voltage, i.e. Vi>Vout, the current flows from Vi to Vout. Due to being a redundant power supply application, the load power supply voltage Vout may be higher than the input power supply voltage Vi. At this time, the external circuit controls the MOSFET gate to turn off the source and drain path. At the same time, due to the reverse blocking effect of the internal diode, the load power supply cannot reverse flow back to the input power supply.

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