WR-D4007 | RELIANCE | Emitter drive module

Description

WR-D4007 | RELIANCE | Emitter drive module

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WR-D4007
The guarantee value of the gate emitter driving voltage VGE of IGBT is ± 20V. If a voltage exceeding the guarantee value is added between its gate and emitter, it may damage the IGBT. Therefore, a gate voltage limiting circuit should be installed in the driving circuit of IGBT.

Due to the fact that WR-D4007  is a composite of power MOSFET and PNP bipolar transistor, especially with MOS gate structure, in addition to the necessary protection mentioned above, just like other MOS structure devices, IGBT is also very sensitive to static voltage. Therefore, when assembling and welding IGBT, the following precautions must also be taken:
——Before touching the WR-D4007  by hand, the static electricity on the human body should be discharged before operation, and contact with the driver terminals of the module should be avoided as much as possible. When contact is necessary, it should be ensured that all static electricity carried by the human body has been discharged at this time;
——During welding operations, in order to prevent static electricity from damaging the IGBT, the welding machine must be reliably grounded. The application of IGBT in uninterruptible power supply

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