General Electric Mark V Series DS200CTBAG1ADD Terminal Board

Description

General Electric Mark V Series DS200CTBAG1ADD Terminal Board

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DDR double data rate technology transfers data twice per clock signal cycle, and DS200CTBAG1ADD can achieve twice the transmission rate of previous synchronous DRAM devices. The DDR3 version was first launched in 2005 and widely adopted in 2007. Compared to earlier DDR and DDR2 versions, it has stronger performance and lower energy consumption.

With the updates and iterations of technology, the data execution rate has developed rapidly. Although mature microprocessor technology can manage data throughput, the capacity limitations of DRAM may pose challenges.

Initially, DS200CTBAG1ADD memory provided 1GB and 2GB of capacity, but eventually evolved to 4GB. Since then, Integrated Silicon Solution (ISSI) and other leading suppliers of widely used storage have realized the necessity of scalability, leading to the emergence of 8GB and 16GB products. These new features support the existing design of application maintenance processors and avoid redesign due to DRAM capacity limitations.

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